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Si4914DY
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ a
Max
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
Ch-1
Ch-2
1.0
1.0
2.5
2.5
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 85 °C
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 7.0 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
20
20
0.019
100
100
1
500
0.015
20
0.023
nA
μA
mA
A
Drain-Source On-State Resistance b
r DS(on)
V GS = 10 V, I D = 7.4 A
V GS = 4.5 V, I D = 5.6 A
Ch-2
Ch-1
0.016
0.026
0.020
0.032
Ω
V GS = 4.5 V, I D = 6.4 A
Ch-2
0.022
0.027
Forward Transconductance b
g fs
V DS = 15 V, I D = 7.0 A
V DS = 15 V, I D = 7.4 A
Ch-1
Ch-2
19
22
S
Diode Forward Voltage b
V SD
I S = 1.7 A, V GS = 0 V
I S = 1 A, V GS = 0 V
Ch-1
Ch-2
0.75
0.36
1.1
0.40
V
Dynamic a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q g
Q gs
Q gd
Channel-1
V DS = 15 V, V GS = 4.5 V, I D = 7.0 A
Channel-2
V DS = 15 V, V GS = 4.5 V, I D = 7.4 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
5.6
7.3
2.3
2.8
1.7
2.2
8.5
11
nC
Gate Resistance
Turn-On Delay Time
Rise Time
R g
t d(on)
t r
Channel-1
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.5
0.5
2.3
1.6
6
7
13
13
3.6
2.5
10
11
20
20
Ω
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t d(off)
t f
t rr
Channel-2
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 1.3 A, di/dt = 100 A/μs
I F = 2.2 A, di/dt = 100 μA/μs
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
27
35
9
10
30
30
40
53
15
15
50
50
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
SCHOTTKY SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V F
Test Conditions
I F = 1.0 A
I F = 1.0 A, T J = 150 °C
Min
Typ
0.36
0.27
Max
0.40
0.31
Unit
V
V r = 30 V
0.008
0.50
Maximum Reverse Leakage Current
I rm
V r = 30 V, T J = 100 °C
3.5
10
mA
V r = - 30 V, T J = 125 °C
10
100
Junction Capacitance
C T
V r = 10 V
58
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 72938
S-61959-Rev. C, 09-Oct-06
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